Defect-Resistant Radiative Performance of m-Plane Immiscible Al1-xInxN Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters

被引：40

作者：

Chichibu, Shigefusa F. ^{[1
]}

Kojima, Kazunobu ^{[1
]}

Uedono, Akira ^{[2
]}

Sato, Yoshitaka ^{[3
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan

[2] Univ Tsukuba, Div Appl Phys, Fac Pure & Appl Sci, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058573, Japan

[3] Futaba Corp, 1080 Yabutsuka, Chiba 2994395, Japan

来源：

ADVANCED MATERIALS | 2017年 / 29卷 / 05期

关键词：

III NITRIDE SEMICONDUCTORS; QUANTUM-WELL STRUCTURES; LOCALIZED EXCITONS; OPTICAL-PROPERTIES; BLUE; PHOTOLUMINESCENCE; LUMINESCENCE; EMISSION; NONPOLAR; ORIGIN;

D O I：

10.1002/adma.201603644

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Planar vacuum-fluorescent-display devices emitting polarized UV-C, blue, and green light are demonstrated using immiscible Al1-xInxN nanostructures grown in nonpolar m-directions. Despite the presence of high concentration of nonradiative recombination centers, the Al1-xInxN nanostructures emit polarized light with the luminescence lifetimes of 22-32 ps at 300 K. This defect-resistant radiative performance suggests supernormal localized characteristics of electron-hole pairs.

引用

页数：9

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