Pyrene-affixed triazoles: a new class of molecular semiconductors for robust, non-volatile resistive memory devices

被引：14

作者：

Barman, Biswajit K. ^{[1
]}

Guru, Murali M. ^{[1
]}

Panda, Gaurav K. ^{[1
]}

Maji, Biplab ^{[1
]}

Vijayaraghavan, Ratheesh K. ^{[1
,2
]}

机构：

[1] Indian Inst Sci Educ & Res Kolkata, Dept Chem Sci, Mohanpur 741246, India

[2] Indian Inst Sci Educ & Res Kolkata, Ctr Adv Funct Mat, Mohanpur 741246, India

来源：

CHEMICAL COMMUNICATIONS | 2019年 / 55卷 / 32期

关键词：

RECENT PROGRESS; ORGANIC MEMORY; BEHAVIOR; PERFORMANCE; HETEROACENE; INTEGRATION; POLYMERS;

D O I：

10.1039/c8cc10185j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Molecular semiconductors that possess electric field induced switching of resistivity have been of great interest as they are excellent candidates for bi-stable resistive memory devices. The supremacy of such devices lies in the reversibility and non-volatile nature of the recorded information. Herein, we have demonstrated a new class of semiconductors that execute reversible non-volatile memory in the fabricated flexible devices with low switching threshold voltages, high ON/OFF ratios and good ambient stability.

引用

收藏

页码：4643 / 4646

页数：4

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