Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement

被引：5

作者：

Dou, Chunmeng ^{[1
]}

Shoji, Tomoya ^{[1
]}

Nakajima, Kazuhiro ^{[1
]}

Kakushima, Kuniyuki ^{[2
]}

Ahmet, Parhat ^{[1
]}

Kataoka, Yoshinori ^{[2
]}

Nishiyama, Akira ^{[2
]}

Sugii, Nobuyuki ^{[2
]}

Wakabayashi, Hitoshi ^{[2
]}

Tsutsui, Kazuo ^{[1
]}

Natori, Kenji ^{[1
]}

Iwai, Hiroshi ^{[1
]}

机构：

[1] Tokyo Inst Technol, Frontier Res Ctr, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Interdisciplianry Grad Sch Sci, Yokohama, Kanagawa 2268502, Japan

来源：

MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 04期

关键词：

I-N-DIODES; MOS-TRANSISTORS; SILICON; DEPENDENCE; INSULATOR;

D O I：

10.1016/j.microrel.2013.11.016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Adopting the gated p-i-n diode configuration, the interface state density (D) at the Si/SiO2 interface of Si fin structures on Silicon-on-Insulator (SQL) wafers has been systematically studied using charge pumping method. The optimal forming gas annealing temperature for the three-dimensional (3D) surface is extracted. A new methodology for separately quantifying the local D-it at different regions of the 3D surfaces (i.e., the top/side walls and the corners) is also derived by characterizing the fins with various widths and the planar counterparts. The results validate the necessity to independently consider the corner regions, at which substantially high local D-it, situates, and thus further clarify the origin of high D-it, at 3D surfaces. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：725 / 729

页数：5

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