Fabrication and electroluminescence of n-ZnO nanorods/p-Si nanowires heterostructured light-emitting diodes

被引：1

作者：

Dai, Jun ^{[1
]}

Fan, Yijie ^{[1
]}

机构：

[1] Jiangsu Univ Sci & Technol, Dept Phys, Zhanjiang 212003, Jiangsu, Peoples R China

来源：

MATERIALS IN INDUSTRY AND NANOTECHNOLOGY | 2013年 / 771卷

关键词：

Zinc Oxide; nanostructure; light-emitting diodes; ARRAYS; LASERS;

D O I：

10.4028/www.scientific.net/AMR.771.135

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The n-ZnO nanorods/p-Si nanowires heterojunction was fabricated by chemical method. The microstructure of the epitaxially grown ZnO nanorod was characterized by scanning electron microscopy, X-ray diffraction and transmission electron microscopy. The photoluminescence of the nanostructure showed a typical UV emission band and a defect-related emission band. Further, the electroluminescence of the nanostructure were measured, and the mechanism was discussed based on the band diagram of the n-ZnO nanorods/p-Si nanowires heterojunction.

引用

页码：135 / 138

页数：4

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