Super high voltage Schottky diode with low leakage current for x- and γ-ray detector application

被引：30

作者：

Kosyachenko, L. A. ^{[1
]}

Gnatyuk, V. A. ^{[2
]}

Aoki, T. ^{[2
]}

Sklyarchuk, V. M. ^{[1
]}

Sklyarchuk, O. F. ^{[1
]}

Maslyanchuk, O. L. ^{[1
]}

机构：

[1] Yuriy Fedkovych Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine

[2] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 09期

关键词：

cadmium compounds; charge injection; etching; gamma-ray detection; II-VI semiconductors; leakage currents; nickel; ohmic contacts; rectification; Schottky diodes; semiconductor-metal boundaries; X-ray detection; CDTE DIODE; JUNCTIONS; CDZNTE;

D O I：

10.1063/1.3093839

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A significant improvement in x-/gamma-ray detector performance has been achieved by forming both rectifying and near-Ohmic contacts by the deposition of Ni on opposite surfaces of semi-insulating CdTe crystals pretreated by special chemical etching and Ar-ion bombardment with different parameters. The reduced injection of the minority carriers from the near-Ohmic contact in the neutral part of the diode provides low leakage current even at high bias (< 50 nA/cm(2) at 2000 V and 293 K). The electrical properties of the detectors are well described quantitatively by the generation-recombination Sah-Noyce-Shockley theory excepting the high reverse voltage range where some injection of minority carriers takes place.

引用

页数：3

共 14 条

[1] Laser-induced shock wave stimulated doping of CdTe crystals [J].

Gnatyuk, V. A. ;

Aoki, T. ;

Hatanaka, Y. .

APPLIED PHYSICS LETTERS, 2006, 88 (24)

[2] Electrical characteristics of Schottky diodes based on semi-insulating CdTe single crystals [J].

Kosyachenko, L. A. ;

Maslyanchuk, O. L. ;

Sklyarchuk, V. M. ;

Grushko, E. V. ;

Gnatyuk, V. A. ;

Aoki, T. ;

Hatanaka, Y. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (01)

[3] Charge collection properties of a CdTe Schottky diode for x- and γ-rays detectors [J].

Kosyachenko, L. A. ;

Maslyanchuk, O. L. ;

Gnatyuk, V. A. ;

Lambropoulos, C. ;

Rarenko, I. M. ;

Sklyarchuk, V. M. ;

Sklyarchuk, O. F. ;

Zakharuk, Z. I. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (07)

[4] Special features of charge transport in Schottky diodes based on semi-insulating CdTe [J].

Kosyachenko, LA ;

Maslyanchuk, OL ;

Sklyarchuk, VM .

SEMICONDUCTORS, 2005, 39 (06) :722-729

[5] Improvement of the CdTe diode detectors using a guard-ring electrode [J].

Nakazawa, K ;

Oonuki, K ;

Tanaka, T ;

Kobayashi, Y ;

Tamura, K ;

Mitani, T ;

Sato, G ;

Watanabe, S ;

Takahashi, T ;

Ohno, R ;

Kitajima, A ;

Kuroda, Y ;

Onishi, M .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (04) :1881-1885

[6] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[7]

SCHLESINGER TE, 1995, SEMICONDUCTORS ROOM, V43, P238

[8] Recent advances in compound semiconductor radiation detectors [J].

Sellin, PJ .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 513 (1-2) :332-339

[9] CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications [J].

Szeles, C .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (03) :783-790

[10] High-resolution Schottky CdTe diode for hard X-ray and gamma-ray astronomy [J].

Takahashi, T ;

Paul, B ;

Hirose, K ;

Matsumoto, C ;

Ohno, R ;

Ozaki, T ;

Mori, K ;

Tomita, Y .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 436 (1-2) :111-119

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