Flattening of micro-structured Si surfaces by hydrogen annealing

被引：6

作者：

Hiruta, R

Kuribayashi, H

Shimizu, R

Sudoh, K

Iwasaki, H

机构：

[1] Fuji Elect Adv Technol Co Ltd, Device Technol Lab, Matsumoto, Nagano 3900821, Japan

[2] Fuji Elect Adv Technol Co Ltd, Mat & Sci Lab, Hino, Tokyo 1918502, Japan

[3] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

来源：

APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 15期

关键词：

silicon; microstructure; flattening; hydrogen annealing;

D O I：

10.1016/j.apsusc.2005.12.051

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report atomic scale flattening of surfaces of microstructures formed on Si wafers by furnace annealing. To avoid thermal deformation of the fabricated structures, advantage was taken of hydrogen annealing, which enables us to decrease the relaxation rate of Si surfaces due to surface hydrogenation. We examined cross-sectional shape and sidewall morphology of 3 mu m deep trenches on Si(001) substrates after annealing at 1000 degrees C under various H-2 pressures of 40-760 Torr. We successfully formed Si trenches with flat surfaces composed of terraces and steps while preserving the designed trench profile by increasing H-2 pressure to 760 Torr. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：5279 / 5283

页数：5

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