Electrochromic Properties of Graphene Doped Nb2O5 Thin Film

被引:12
|
作者
Akkurt, Nihan [1 ]
Pat, Suat [1 ]
Mohammadigharehbagh, Reza [1 ,2 ]
Olkun, Ali [2 ]
Korkmaz, Sadan [1 ]
机构
[1] Eskisehir Osmangazi Univ, Fac Sci & Letters, Dept Phys, TR-26480 Eskisehir, Turkey
[2] Bursa Uludag Univ, Bursa, Turkey
关键词
Nb2O5 thin film; Graphene; Electrochromic device; Coloration efficiency; NIOBIUM PENTOXIDE; SOL-GEL; ENHANCED COLORATION; SUPERCAPACITORS; COATINGS;
D O I
10.1149/2162-8777/abd079
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electrochromic device plays a key role in energy efficiency management and modern display technology. As a cathodic coloration material, Nb2O5 is one of the important material used in the electrochromic device. The capacity of a layer is related with the intercalation and deintercalation behavior. Graphene Doping is a promising process for the high-capacity ion storage application. Graphene is a two-dimensional material and it possesses excellent mechanical and electrical properties. In this paper, graphene doped Nb2O5 thin films have been deposited onto ITO coated glass substrate by a thermionic vacuum arc (TVA) technique. The coloring efficiency has been calculated as 91 and 56 cm(2) C-1 at 414 and 550 nm, respectively. The transmittance variation of graphene doped Nb2O5 layer have determined as 42%. According to the Raman spectroscopy, the peaks for orthorhombic phase of Nb2O5 and graphene bands have been observed. According to obtained results, graphene is a promising dopant material for the high performance electrochromic device with Nb2O5 active layer.
引用
收藏
页数:7
相关论文
共 50 条
  • [41] Alternative Nb2O5-TiO2 thin films for electrochromic devices
    Costa E.D.A.
    Avellaneda C.O.
    Pawlicka A.
    Pawlicka, A. (Agnieszka@iqsc.sc.usp.br), 2001, Kluwer Academic Publishers (36) : 1407 - 1410
  • [42] Photoelectrochemical Properties of Sol-Gel Nb2O5 Films
    Djalma A. de Barros Filho
    Pompeu P. Abreu Filho
    U. Werner
    Michel A. Aegerter
    Journal of Sol-Gel Science and Technology, 1997, 8 : 735 - 742
  • [43] Photoelectrochemical properties of sol-gel Nb2O5 films
    Djalma De A. Barros Filho
    Pompeu P. Abreu Filho
    U. Werner
    Michel A. Aegerter
    Journal of Sol-Gel Science and Technology, 1997, 8 : 735 - 742
  • [44] Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films
    Maehne, H.
    Berger, L.
    Martin, D.
    Klemm, V.
    Slesazeck, S.
    Jakschik, S.
    Rafaja, D.
    Mikolajick, T.
    SOLID-STATE ELECTRONICS, 2012, 72 : 73 - 77
  • [45] Sol-gel coatings of Nb2O5 and Nb2O5:Li+:: Electrochemical and structural characterization
    Melo, L
    Avellaneda, CO
    Pawlicka, A
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2002, 374 : 101 - 106
  • [46] Photoelectrochemical properties of sol-gel Nb2O5 films
    Barros, DD
    Abreu, PP
    Werner, U
    Aegerter, MA
    JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 1997, 8 (1-3) : 735 - 742
  • [47] The Effect of Crystallinity on the Rapid Pseudocapacitive Response of Nb2O5
    Kim, Jong Woung
    Augustyn, Veronica
    Dunn, Bruce
    ADVANCED ENERGY MATERIALS, 2012, 2 (01) : 141 - 148
  • [48] Nb2O5 nano and microspheres fabricated by laser ablation
    Abdulrahman, Tamara E.
    Salim, Evan T.
    Mahdi, Rana O.
    Wahid, M. H. A.
    ADVANCES IN NATURAL SCIENCES-NANOSCIENCE AND NANOTECHNOLOGY, 2022, 13 (04)
  • [49] Anodic Nb2O5 Nonvolatile RRAM
    Kundozerova, T. V.
    Grishin, A. M.
    Stefanovich, G. B.
    Velichko, A. A.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (04) : 1144 - 1148
  • [50] Hydrogen photochromism in Nb2O5 powders
    Pan, Lei
    Wang, Yi
    Wang, XianJie
    Qu, HuiYing
    Zhao, JiuPeng
    Li, Yao
    Gavrilyuk, Alexander
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2014, 16 (38) : 20828 - 20833