Absorbing assist pattern technique (A2PT) for effective sidelobe control for attenuated phase-shifting masks in optical projection lithography

被引：1

作者：

Pforr, R ^{[1
]}

Gans, F ^{[1
]}

Knobloch, J ^{[1
]}

Thiele, J ^{[1
]}

机构：

[1] Infineon Technol, D-01099 Dresden, Germany

来源：

19TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2 | 1999年 / 3873卷

关键词：

attenuated phase-shifting masks; sidelobes; DUV; process window;

D O I：

10.1117/12.373289

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A novel technique of sidelobe suppression based on absorbing assist pattern is introduced. Chrome shields are placed exactly at the position, where sidelobes appear. The effectiveness of this technique for sidelobe control is demonstrated by simulation and experimental results. The resulting process window enlargement for 180nm contacts is investigated. Corresponding mask making issues are discussed.

引用

页码：964 / 968

页数：5

共 4 条

[1] Initialization for robust inverse synthesis of phase-shifting masks in optical projection lithography
Chan, Stanley H.
Wong, Alfred K.
Lam, Edmund Y.
OPTICS EXPRESS, 2008, 16 (19) : 14746 - 14760
[2] EXTENDING THE LIMITS OF OPTICAL LITHOGRAPHY FOR ARBITRARY MASK LAYOUTS USING ATTENUATED PHASE-SHIFTING MASKS WITH OPTIMIZED ILLUMINATION
RONSE, K
PFORR, R
BAIK, KH
JONCKHEERE, R
VANDENHOVE, L
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06): : 3783 - 3792
[3] 0.13 μm optical lithography for random logic devices using 248 nm attenuated phase-shifting masks
Chen, YT
Lin, CH
Lin, HT
Hsieh, HC
Yu, SS
Yen, A
OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 : 99 - 110
[4] Application of an effective wavelet matrix transform approach for optical lithography simulation: Analysis of topological effects of phase-shifting masks
Lee, SG
Kim, HJ
Lee, DH
Lee, JU
OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 : 723 - 733

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