Subnanometric Si film reactive diffusion on Ni

被引：12

作者：

Portavoce, A. ^{[1
,2
]}

Lalmi, B. ^{[2
]}

Treglia, G. ^{[3
]}

Girardeaux, C. ^{[2
]}

Mangelinck, D. ^{[1
,2
]}

Aufray, B. ^{[3
]}

Bernardini, J. ^{[1
,2
]}

机构：

[1] Fac Sci & Tech St Jerome, CNRS, IM2NP, F-13397 Marseille, France

[2] Aix Marseille Univ, Fac Sci & Tech St Jerome, IM2NP, F-13397 Marseille, France

[3] CNRS, CINAM, F-13288 Marseille, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 02期

关键词：

Auger electron spectra; diffusion; dissolving; elemental semiconductors; monolayers; Monte Carlo methods; nanostructured materials; nickel; phase diagrams; semiconductor thin films; silicon; solid solutions; THIN-FILM; SEGREGATION; KINETICS; GROWTH; LAYERS;

D O I：

10.1063/1.3177187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dissolution of 3-5 Si ML on Ni has been studied using in situ ultrahigh vacuum Auger electron spectroscopy (AES). The AES signal shows delays and kinetic changes in the dissolution process. These observations, combined with atomistic kinetic Monte Carlo simulations, considering an fcc Ni-Si nonregular solid solution, show that the AES signal should correspond to a successive apparition of the Ni-silicides present in the Ni-Si phase diagram at low temperatures, starting with the Si-richer phase.

引用

页数：3

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