Vertically integrated amorphous silicon particle sensors

被引：0

作者：

Wyrsch, N ^{[1
]}

Miazza, C ^{[1
]}

Dunand, S ^{[1
]}

Shah, A ^{[1
]}

Moraes, D ^{[1
]}

Anelli, G ^{[1
]}

Despeisse, M ^{[1
]}

Jarron, P ^{[1
]}

Dissertori, G ^{[1
]}

Viertel, G ^{[1
]}

机构：

[1] Univ Neuchatel, Inst Microtech, CH-2000 Neuchatel, Switzerland

来源：

AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY- 2004 | 2004年 / 808卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertically integrated particle sensors have been developed using thin-film on ASIC technology. Hydrogenated amorphous silicon n-i-p diodes have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50mum). Corresponding diodes were later directly deposited on two types of CMOS readout chips. These vertically integrated particle sensors were tested in beta particle beam from Ni-63 and Sr-90 sources. Detection of single low- and high- energy beta particle was achieved.

引用

页码：441 / 446

页数：6

共 14 条

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