Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures

被引：7
作者：
Kim, Su Jin [1 ]
Kim, Kyeong Heon [1 ]
Chung, Ho Young [1 ]
Shin, Hee Woong [1 ]
Lee, Byeong Ryong [1 ]
Jeong, Tak [2 ]
Park, Hyung Jo [2 ]
Kim, Tae Geun [1 ]
机构：
[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
[2] Korea Photon Technol Inst, LED Device Team, Kwangju 500779, South Korea
来源：
OPTICS LETTERS | 2014年 / 39卷 / 12期
基金：
新加坡国家研究基金会;
关键词：
EXTRACTION EFFICIENCY; PERFORMANCE; DEPENDENCE; INCREASE; DAMAGE;
D O I：
10.1364/OL.39.003464
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We investigated GaN-based vertical light-emitting diodes (VLEDs) with periodic and conical nanopillar arrays (CNAs) to improve the light-output efficiency. We found that a 470 nm diameter and 0.8-0.9 m height increased the light output, and the devices suffered no significant electrical property degradations. The light-output power was 272% and 5.1% greater than flat-and rough-surface VLEDs at 350 mA, respectively. These improved optical properties are attributed to the optimized CNAs, which increase the effective photon escape cone and reduce the total internal reflection at the n-GaN-air interface. We also investigated the emission characteristics and mechanisms with finite-difference time-domain simulations. (C) 2014 Optical Society of America
引用
收藏
页码：3464 / 3467
页数：4
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