LINEAR AND NONLINEAR INTERSUBBAND REFRACTIVE INDEX CHANGES IN WURTZITE AlGaN/GaN DOUBLE QUANTUM WELLS: EFFECTS OF PIEZOELECTRICITY AND SPONTANEOUS POLARIZATION

被引：0

作者：

Zhang, L. ^{[1
]}

机构：

[1] Panyu Polytech, Dept Mech & Elect, Panyu 511488, Peoples R China

来源：

SURFACE REVIEW AND LETTERS | 2009年 / 16卷 / 01期

关键词：

Double quantum wells; piezoelectricity and spontaneous polarization effects; refractive index; wurtzite nitride semiconductor; OPTICAL NONLINEARITIES; ELECTRIC-FIELD; TRANSITIONS; ABSORPTION; CARRIER; GAIN; ENHANCEMENT; MODEL; BAND; GAN;

D O I：

10.1142/S0218625X09012226

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Based on the density-matrix approach and iterative treatment, a detailed procedure for the calculation of the linear and nonlinear intersubband refractive index changes (RICs) in wurtzite GaN-based coupling quantum wells (CQWs) is given. The simple analytical formulas for electronic eigenstates and the linear and third-order nonlinear RICs in the systems are also deduced. Numerical result on a typical AlGaN/GaN CQW shows that the linear and nonlinear RICs sensitively depend on the structural parameters of the CQW system as well as the doped fraction of nitride semicondutor.

引用

页码：11 / 17

页数：7

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