Titanium-nitride-based integrated plasmonic absorber/emitter for solar thermophotovoltaic application

被引：87

作者：

Wang, Huacun ^{[1
,2
,3
]}

Chen, Qin ^{[1
,2
]}

Wen, Long ^{[1
,2
]}

Song, Shichao ^{[1
,2
]}

Hu, Xin ^{[1
,2
]}

Xu, Gaiqi ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Key Lab Nanodevices & Applicat CAS, Suzhou 215123, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215123, Peoples R China

[3] Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China

来源：

PHOTONICS RESEARCH | 2015年 / 3卷 / 06期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

PHOTONIC CRYSTALS; LIGHT-ABSORPTION; EFFICIENCY; DESIGN; BAND; CELLS;

D O I：

10.1364/PRJ.3.000329

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Titanium nitride (TiN) as a refractory plasmonic material is proposed to be used as an angle-insensitive integrated broadband solar absorber and narrowband near-infrared (NIR) emitter for solar thermo-photovoltaic (STPV) application. By constructing TiN-nanopatterns/dielectric/TiN stack metamaterial, approximately 93% light absorption in a wavelength range of 0.3-0.9 mu m and near unit narrowband (Delta lambda/lambda similar to 0.3) emission in NIR (similar to 2 mu m) were demonstrated by numerical simulation. Keeping the excellent light absorption in the visible band, the emission wavelength can be easily tuned by patterning the top TiN layer into various subwavelength structures. This dual function attributes to the intrinsic absorption and plasmonic property of TiN. In such an integrated structure, broadband absorption and narrowband emission need to be balanced for an optimized power efficiency conversion. Detailed analysis has demonstrated that the STPV system based on this integrated absorber/emitter can exceed the Shockley-Queissor limit at 1000 K. (C) 2015 Chinese Laser Press

引用

页码：329 / 334

页数：6

共 37 条

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