Deep levels in He++ irradiated Be-doped Al0.5Ga0.5As MBE layers

被引：3
作者：
Szatkowski, J
Placzek-Popko, E
Sieranski, K
Hansen, OP
Johansen, A
Soerensen, C
机构：
[1] Wroclaw Tech Univ, Inst Phys, PL-50370 Wroclaw, Poland
[2] Univ Copenhagen, Oersted Lab, DK-2100 Copenhagen, Denmark
来源：
PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷
关键词：
AlGaAs; deep levels; DX centers;
D O I：
10.1016/S0921-4526(99)00620-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
He++ irradiation induced defects in Be-doped Al-0.5 Ga-0.5 As MBE layers have bean studied using the DLTS method. The samples were irradiated by He++ ions of an energy equal to 0.5 MeV and fluence of 10(12) cm(-2). In irradiated samples, persistent photocapacitance was observed after illumination of the samples at the liquid nitrogen ambient. Defect (or defects) introduced during irradiation can be responsible for the observed persistent photocapacitance effect. (C) 1999 Elsevier Science B.V. All rights reserved.
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收藏
页码：718 / 721
页数：4
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