Island and wetting-layer intermixing in the Ge/Si(001) system upon capping

被引：6
作者：
De Seta, M. [1 ]
Capellini, G. [1 ]
Evangelisti, F. [1 ]
机构：
[1] Univ Roma Tre, Dipartimento Fis E Amaldi, I-00146 Rome, Italy
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2009年 / 46卷 / 1-2期
关键词：
Silicon; Germanium; Interdiffusion; Self-assembled islands;
D O I：
10.1016/j.spmi.2008.10.004
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper we present an atomic force microscopy and X-ray photoemission spectroscopy study of the composition and shape evolution of self-assembled Ge/Si(001) islands upon capping with Si. We found that the islands undergo a reverse Straski-Krastanov shape evolution, with a progressive Si-enrichment of both the wetting layer and the islands. We demonstrate that the island shape evolves at constant volume with silicon atom incorporation occurring in the absence of lateral diffusion of Ge and Si atoms from the wetting layer to the islands themselves. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：328 / 332
页数：5
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