Structure of microcrystalline silicon films deposited at very low temperatures by hot-wire CVD

被引：3

作者：

Peiró, D ^{[1
]}

Bertomeu, J ^{[1
]}

Voz, C ^{[1
]}

Fonrodona, M ^{[1
]}

Soler, D ^{[1
]}

Andreu, J ^{[1
]}

机构：

[1] Univ Barcelona, Dept Fis Aplicada & Opt, Lab Fis Capes Fines, E-08028 Barcelona, Spain

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 69卷

关键词：

hot-wire CVD; mu c-Si : H; structural properties;

D O I：

10.1016/S0921-5107(99)00319-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new technological regime for the deposition of intrinsic hydrogenated microcrystalline silicon (mu c-Si:H) films at very low temperatures by the Hot-Wire CVD technique is studied in this paper. The influence of the main technological parameters on the structural properties of intrinsic samples is reviewed. Detrimental post-oxidation effects arising in the layers with the exposure to the atmosphere were strongly reduced by depositing the material at pressures lower than 1 x 10(-2) mbar. Enhanced crystalline fractions over 95% have been obtained at very low temperatures (T-s < 200 degrees C) by proper tuning of the hydrogen dilution. Moreover, this low substrate temperature has been shown to promote a decrease of the subgap absorption, which has been attributed to a low deep defect density related to the hydrogen passivation of dangling bonds in the grain boundaries. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：536 / 541

页数：6

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