Integer quantum Hall effect on hydrogen-passivated silicon (111) surfaces

被引：8

作者：

Eng, K. ^{[1
]}

McFarland, R. N. ^{[1
]}

Kane, B. E. ^{[1
]}

机构：

[1] Univ Maryland, Lab Phys Sci, College Pk, MD 20740 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 34卷 / 1-2期

关键词：

quantum Hall effect; silicon; high mobility;

D O I：

10.1016/j.physe.2006.03.069

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report magnetoresistance measurements of a high-mobility two-dimensional electron system induced on a hydrogen-passivated Si(111) surface. At temperatures of T = 150 mK and magnetic fields up to 12 T, signatures of the integer quantum Hall effect with the lowest Landau filling factor of 2 have been observed. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：701 / 702

页数：2

共 7 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].