Control of Exchange Coupling Between Granular Oxide and Highly Exchange Coupled Cap Layers and the Effect on Perpendicular Magnetic Switching and Recording Characteristics
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作者:
Choe, Gunn
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Hitachi Global Storage Technol, Media Dev, San Jose, CA 95193 USAHitachi Global Storage Technol, Media Dev, San Jose, CA 95193 USA
Choe, Gunn
[1
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Ikeda, Yoshihiro
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Hitachi Global Storage Technol, San Jose Res Ctr, San Jose, CA 95193 USAHitachi Global Storage Technol, Media Dev, San Jose, CA 95193 USA
Ikeda, Yoshihiro
[2
]
Zhang, Kezhao
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Hitachi Global Storage Technol, Media Dev, San Jose, CA 95193 USAHitachi Global Storage Technol, Media Dev, San Jose, CA 95193 USA
Zhang, Kezhao
[1
]
Tang, Kai
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Hitachi Global Storage Technol, Media Dev, San Jose, CA 95193 USAHitachi Global Storage Technol, Media Dev, San Jose, CA 95193 USA
Tang, Kai
[1
]
Mirzamaani, Mohammad
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Hitachi Global Storage Technol, Media Dev, San Jose, CA 95193 USAHitachi Global Storage Technol, Media Dev, San Jose, CA 95193 USA
Mirzamaani, Mohammad
[1
]
机构:
[1] Hitachi Global Storage Technol, Media Dev, San Jose, CA 95193 USA
[2] Hitachi Global Storage Technol, San Jose Res Ctr, San Jose, CA 95193 USA
We report a systematic study of the switching and recording characteristics of perpendicular magnetic recording media in which the exchange coupling between granular oxide and continuous cap layers was varied. The interfacial exchange coupling strength was controlled by adjusting the magnetization (M(s)) and the thickness (t) of the exchange control layer (ECL) between granular oxide and cap layers. The media switching mechanism highly depends on the oxide-to-cap exchange coupling strength as well as the relative moment ratio of cap and oxide layers. Reversal process is coherent for medium with only granular oxide layer and becomes incoherent with incorporation of ECL and continuous cap layers. Optimizing granular oxide-to-cap exchange coupling improves the media writeability as well as the media signal-to-noise ratio (SNR(m)). At optimum exchange coupling condition, the switching field is significantly reduced even with higher thermal stability factor (K(u) V/k(B) T). However, when the interlayer coupling strength is too weak, independent switching of oxide and cap layers occurs, resulting in poor writeability and high media noise. An optimum design of oxide-to-cap exchange coupling is critical in attaining recording properties for high density recording through selection of appropriate ECL and cap materials.
机构:
Hitachi Global Storage Technol Inc, Media Dev, San Jose, CA 95119 USAHitachi Global Storage Technol Inc, Media Dev, San Jose, CA 95119 USA
Choe, Gunn
Park, Jihoon
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Hitachi Global Storage Technol Inc, Adv Recording Syst, San Jose, CA 95119 USAHitachi Global Storage Technol Inc, Media Dev, San Jose, CA 95119 USA
机构:
NYU, Dept Phys, 4 Washington Pl, New York, NY 10003 USA
CIC NanoGUNE Consolider, Donostia San Sebastian 20018, SpainNYU, Dept Phys, 4 Washington Pl, New York, NY 10003 USA
Fallarino, Lorenzo
Sluka, Volker
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NYU, Dept Phys, 4 Washington Pl, New York, NY 10003 USANYU, Dept Phys, 4 Washington Pl, New York, NY 10003 USA
Sluka, Volker
Kardasz, Bartek
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Spin Transfer Technol Inc, Fremont, CA 94538 USANYU, Dept Phys, 4 Washington Pl, New York, NY 10003 USA
Kardasz, Bartek
Pinarbasi, Mustafa
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Spin Transfer Technol Inc, Fremont, CA 94538 USANYU, Dept Phys, 4 Washington Pl, New York, NY 10003 USA
Pinarbasi, Mustafa
Berger, Andreas
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CIC NanoGUNE Consolider, Donostia San Sebastian 20018, SpainNYU, Dept Phys, 4 Washington Pl, New York, NY 10003 USA
Berger, Andreas
Kent, Andrew D.
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NYU, Dept Phys, 4 Washington Pl, New York, NY 10003 USANYU, Dept Phys, 4 Washington Pl, New York, NY 10003 USA
机构:
Tohoku Univ, Dept Elect Engn, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, JapanTohoku Univ, Dept Elect Engn, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
Tham, Kim Kong
Saito, Shin
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Tohoku Univ, Dept Elect Engn, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, JapanTohoku Univ, Dept Elect Engn, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
Saito, Shin
Hasegawa, Daiji
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Waseda Univ, Waseda Inst Adv Study, Shinjuku Ku, Tokyo 1698050, JapanTohoku Univ, Dept Elect Engn, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
Hasegawa, Daiji
Itagaki, Norikazu
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机构:
Tohoku Univ, Dept Elect Engn, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, JapanTohoku Univ, Dept Elect Engn, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
Itagaki, Norikazu
Hinata, Shintaro
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机构:
Tohoku Univ, Dept Elect Engn, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, JapanTohoku Univ, Dept Elect Engn, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
Hinata, Shintaro
Ishibashi, Shinichi
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Tohoku Univ, Dept Elect Engn, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, JapanTohoku Univ, Dept Elect Engn, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
Ishibashi, Shinichi
Takahashi, Migaku
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Tohoku Univ, Dept Elect Engn, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
Chungnam Natl Univ, Ctr Nanobioengn & Spintron, Taejon 205764, South KoreaTohoku Univ, Dept Elect Engn, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan