Growth and properties of new III-V diluted magnetic semiconductor Ga1-xCrxAs

被引：4
|
作者：
Zaets, W [1 ]
Saito, H [1 ]
Ando, K [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Nanoelectr Res Inst, Tsukuba, Ibaraki 3058568, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 II期
关键词：
defects; molecular beam epitaxy; magnetic materials; magneto-optic materials; semiconducting gallium compounds;
D O I：
10.1016/S0022-0248(01)02169-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
III-V diluted magnetic semiconductor Ga1-xCrxAs was successfully synthesized by low-temperature molecular beam epitaxy. High-quality twin-free films were grown with Cr concentrations up to x = 0.05 under an AS(4)/Ga beam flux ratio similar to40. The films showed local ferromagnetic ordering at T < 30 K. With higher Cr concentrations or lower As-4/Ga beam flux ratios, the film quality degraded. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1339 / 1343
页数：5
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