Low-loss aluminium nitride thin film for mid-infrared microphotonics

被引：59

作者：

Lin, Pao Tai ^{[1
,2
]}

Jung, Hojoong ^{[3
]}

Kimerling, Lionel C. ^{[1
,2
]}

Agarwal, Anu ^{[1
,2
]}

Tang, Hong X. ^{[3
]}

机构：

[1] MIT, Ctr Mat Proc, Cambridge, MA 02139 USA

[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[3] Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA

来源：

LASER & PHOTONICS REVIEWS | 2014年 / 8卷 / 02期

基金：

美国国家科学基金会;

关键词：

mid-infrared; III-V semiconductors; Integrated optics; CMOS-compatible; OPTICAL 2ND-HARMONIC GENERATION; SILICON WAVE-GUIDES; EPITAXIAL-GROWTH; ALN; CHIP; GAN;

D O I：

10.1002/lpor.201300176

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Mid-infrared (mid-IR) microphotonic devices including (i) straight/bent waveguides and (ii) Y-junction beam splitters are developed on thin films of CMOS-compatible sputter deposited aluminum nitride (AlN)-on-silicon. An optical loss of 0.83 dB/cm at = 2.5 mu m is achieved. In addition, an efficient mid-IR 50:50 beam splitter is demonstrated over 200nm spectral bandwidth along with a <2% power difference between adjacent channels. With the inherent advantage of an ultra-wide transparent window (ultraviolent to mid-IR), our AlN mid-IR platform can enable broadband optical networks on a chip.

引用

页码：L23 / L28

页数：6

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