Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer

被引：8

作者：

Chen, J. ^{[1
]}

Lien, S. C. ^{[2
,3
]}

Shin, Y. C. ^{[2
,3
]}

Feng, Z. C. ^{[2
,3
]}

Kuan, C. H.

Zhao, J. H. ^{[4
]}

Lu, W. J. ^{[5
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[4] Rutgers State Univ, SICLAB, Dept ECE, Piscataway, NJ 08855 USA

[5] Fisk Univ, Dept Chem, Nashville, TN 37208 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

6H-SiC; 4H-SiC; TEM; Raman scattering; RAMAN-SCATTERING; CRYSTALS;

D O I：

10.4028/www.scientific.net/MSF.600-603.39

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The polytype structural variations of a set of SiC bulk wafers with different Nitrogen (N) doping levels, prepared by Physical Vapore Deposition (PVD), are studied. The initial growth conditions were used to produce 6H-polytype SiC, which has been approved for the undoped and lightly doped materials. However, when extreme high N-dopants were applied, the obtained wafer was found with 4H- and 15R-polytype features. Our experimental results of HR-TEM and Raman scattering have revealed clearly the polytype transformation, indicating that the inducement of N in the reactor leads to the polytype transformation of the resulted SiC crystal.

引用

页码：39 / +

页数：2

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