HVPE-GaN growth on ammonothermal GaN crystals

被引：9

作者：

Sochacki, Tomasz ^{[1
]}

Amilusik, Mikolaj ^{[1
]}

Lucznik, Boleslaw ^{[1
]}

Bockowski, Michal ^{[1
]}

Weyher, Janusz L. ^{[1
]}

Nowak, Grzegorz ^{[1
]}

Sadovyi, Bogdan ^{[1
]}

Kamler, Grzegorz ^{[1
]}

Grzegory, Izabella ^{[1
]}

Kucharski, Robert ^{[1
]}

Zajac, Marcin ^{[1
]}

Doradzinski, Robert ^{[1
]}

Dwilinski, Robert ^{[1
]}

机构：

[1] Inst High Pressure Phys PAS, Sokolowska 29-37, PL-01142 Warsaw, Poland

来源：

GALLIUM NITRIDE MATERIALS AND DEVICES VIII | 2013年 / 8625卷

关键词：

Crystal growth; HVPE; Ammonothermal crystallization; homoepitaxy;

D O I：

10.1117/12.2003699

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

HVPE crystallization on ammonothermaly grown GaN crystals (A-GaN) is described. Preparation of the (0001) surface of the A-GaN crystals to the epi-ready state is presented. The HVPE initial growth conditions are determined and demonstrated. An influence of a thickness and a free carrier concentration in the initial substrate on quality and mode of growth by the HVPE is examined. Smooth GaN layers of excellent crystalline quality, without cracks, and with low dislocation density are obtained.

引用

页数：11

共 15 条

[1]

Byrappa K, 2005, WILEY SER MATER ELEC, P387

[2] Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy [J].

Darakchieva, V. ;

Monemar, B. ;

Usui, A. ;

Saenger, M. ;

Schubert, M. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (05) :959-965

[3]

Doradzinski R, 2010, SPRINGER SER MATER S, V133, P137

[4] Next-generation hydrothermal ZnO crystals [J].

Ehrentraut, Dirk ;

Maeda, Katsumi ;

Kano, Masataka ;

Fujii, Katsushi ;

Fukuda, Tsuguo .

JOURNAL OF CRYSTAL GROWTH, 2011, 320 (01) :18-22

[5] Growth and strain characterization of high quality GaN crystal by HVPE [J].

Geng, Huiyuan ;

Sunakawa, Haruo ;

Sumi, Norihiko ;

Yamamoto, Kazutomi ;

Yamaguchi, A. Atsushi ;

Usui, Akira .

JOURNAL OF CRYSTAL GROWTH, 2012, 350 (01) :44-49

[6]

Hashimoto T, 2010, SPRINGER SER MATER S, V133, P161

[7] Defect-selective etching of GaN in a modified molten bases system [J].

Kamler, G ;

Weyher, JL ;

Grzegory, I ;

Jezierska, E ;

Wosinski, T .

JOURNAL OF CRYSTAL GROWTH, 2002, 246 (1-2) :21-24

[8]

KAMLER G, IN PRESS

[9] EQUILIBRIUM PRESSURE OF N-2 OVER GAN AND HIGH-PRESSURE SOLUTION GROWTH OF GAN [J].

KARPINSKI, J ;

JUN, J ;

POROWSKI, S .

JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) :1-10

[10]

Koukitu A, 2010, SPRINGER SER MATER S, V133, P31

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