Effect of tin on the processes of silicon-nanocrystal formation in amorphous SiO x thin-film matrices

被引：8

作者：

Voitovych, V. V. ^{[1
]}

Rudenko, R. M. ^{[2
]}

Kolosiuk, A. G. ^{[1
]}

Krasko, M. M. ^{[1
]}

Juhimchuk, V. O. ^{[3
]}

Voitovych, M. V. ^{[3
]}

Ponomarov, S. S. ^{[3
]}

Kraitchinskii, A. M. ^{[1
]}

Povarchuk, V. Yu. ^{[1
]}

Makara, V. A. ^{[2
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Phys, UA-03650 Kiev, Ukraine

[2] Taras Shevchenko Natl Univ Kyiv, Fac Phys, UA-03187 Kiev, Ukraine

[3] Natl Acad Sci Ukraine, Lashkarev Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

SEMICONDUCTORS | 2014年 / 48卷 / 01期

关键词：

RAMAN-SPECTROSCOPY; VOLUME FRACTION; SPECTRA; CONDUCTIVITY; SCATTERING; SIZE;

D O I：

10.1134/S1063782614010242

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of tin on the processes of silicon-nanocrystal formation in amorphous silicon oxide (a-SiO (x) , x a parts per thousand 1.15) thin-film matrices is studied. It is established that the tin impurity accelerates the processes of crystallization of amorphous silicon. After heat treatment in an argon atmosphere, silicon crystallites embedded in the tin-containing silicon oxide (a-SiO (x) Sn) matrix are smaller in size (6-9 nm) compared to crystallites in a-SiO (x) (a parts per thousand yen10 nm). It is shown that, upon annealing of a-SiO (x) Sn at temperatures increased from 800 to 1100A degrees C, the volume fraction of the crystalline phase increases from 20 to 80%. At the same time, in the samples free from tin, the silicon crystalline phase appears only upon annealing at 1000A degrees C and 1100A degrees C, and the volume fraction of the crystalline phase is 45 and 65%, respectively.

引用

页码：73 / 76

页数：4

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