Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy

被引：36

作者：

Banal, Ryan G. ^{[1
]}

Funato, Mitsuru ^{[1
]}

Kawakami, Ybichi ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 10期

关键词：

Metal-organic vapor-phase epitaxy; Nitrides; Semiconducting III-V materials; THIN-FILMS; QUALITY; LAYERS;

D O I：

10.1016/j.jcrysgro.2009.01.023

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the effect of growth parameters for obtaining high-quality AlN grown directly on sapphire substrates by a hybridized method, derived from simultaneous source supply and conventional migration-enhanced epitaxy. At an optimal growth temperature of 1200 degrees C, AlN was atomically smooth and pit-free, while below and above 1200 degrees C, AlN was rough and with pits, respectively. Surface morphologies also depended on the V/III ratio. Rough surfaces became atomically smooth but then pits appeared, as the V/III ratio increased. The crystallinity revealed by X-ray diffraction changed accordingly. The 600-nm-thick AlN grown under the optimal conditions showed X-ray line widths of as narrow as similar to 43 and similar to 250 arcsec for (0 0 0 2) and (1 0 (1) over bar 2) diffractions, respectively. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2834 / 2836

页数：3

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