Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy

被引：35

作者：

Banal, Ryan G. ^{[1
]}

Funato, Mitsuru ^{[1
]}

Kawakami, Ybichi ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 10期

关键词：

Metal-organic vapor-phase epitaxy; Nitrides; Semiconducting III-V materials; THIN-FILMS; QUALITY; LAYERS;

D O I：

10.1016/j.jcrysgro.2009.01.023

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the effect of growth parameters for obtaining high-quality AlN grown directly on sapphire substrates by a hybridized method, derived from simultaneous source supply and conventional migration-enhanced epitaxy. At an optimal growth temperature of 1200 degrees C, AlN was atomically smooth and pit-free, while below and above 1200 degrees C, AlN was rough and with pits, respectively. Surface morphologies also depended on the V/III ratio. Rough surfaces became atomically smooth but then pits appeared, as the V/III ratio increased. The crystallinity revealed by X-ray diffraction changed accordingly. The 600-nm-thick AlN grown under the optimal conditions showed X-ray line widths of as narrow as similar to 43 and similar to 250 arcsec for (0 0 0 2) and (1 0 (1) over bar 2) diffractions, respectively. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2834 / 2836

页数：3

共 20 条

[1] 250 nm AlGaN light-emitting diodes [J].

Adivarahan, V ;

Sun, WH ;

Chitnis, A ;

Shatalov, M ;

Wu, S ;

Maruska, HP ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2004, 85 (12) :2175-2177

[2] Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy [J].

Balakrishnan, Krishnan ;

Bandoh, Akira ;

Iwaya, Motoaki ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (12-16) :L307-L310

[3] Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy [J].

Banal, Ryan G. ;

Funato, Mitsuru ;

Kawakamia, Yoichi .

APPLIED PHYSICS LETTERS, 2008, 92 (24)

[4] 231-261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire [J].

Hirayama, Hideki ;

Yatabe, Tohru ;

Noguchi, Norimichi ;

Ohashi, Tomoaki ;

Kamata, Norihiko .

APPLIED PHYSICS LETTERS, 2007, 91 (07)

[5] Flat surfaces and interfaces in AlN/GaN heterostructures and superlattices grown by flow-rate modulation epitaxy [J].

Hiroki, M ;

Kobayashi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4B) :2305-2308

[6] Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes [J].

Kaeding, JF ;

Wu, Y ;

Fujii, T ;

Sharma, R ;

Fini, PT ;

Speck, JS ;

Nakamura, S .

JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) :257-263

[7] Tensile strain introduced in AlN layer grown by metal-organic vapor-phase epitaxy on (0001) 6H-SiC with (GaN/AlN) buffer [J].

Kurimoto, M ;

Nakada, T ;

Ishihara, Y ;

Shibata, M ;

Honda, T ;

Kawanishi, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (5B) :L551-L553

[8]

Metzger T, 1998, PHILOS MAG A, V77, P1013, DOI 10.1080/01418619808221225

[9] A reaction-transport model for AlGaN MOVPE growth [J].

Mihopoulos, TG ;

Gupta, V ;

Jensen, KF .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :733-739

[10] Two-step process for the metalorganic chemical vapor deposition growth of high quality AlN films on sapphire [J].

Paduano, Q ;

Weyburne, D .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4A) :1590-1591

← 1 2 →