Enhanced performance of graphene by using gold film for transfer and masking process

被引：15

作者：

Choi, Jinwoo ^{[1
,2
]}

Kim, Hyeji ^{[1
,2
]}

Park, Jaehyun ^{[1
,2
]}

Iqbal, M. Waqas ^{[1
,3
]}

Iqbal, M. Zahir ^{[1
,3
]}

Eom, Jonghwa ^{[1
,3
]}

Jung, Jongwan ^{[1
,2
]}

机构：

[1] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea

[2] Sejong Univ, Inst Nano & Adv Mat Engn, Seoul 143747, South Korea

[3] Sejong Univ, Dept Phys, Seoul 143747, South Korea

来源：

CURRENT APPLIED PHYSICS | 2014年 / 14卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

Graphene; Chemical vapor deposition; Transfer; Organic residue; Au-assisted transfer; CHEMICAL-VAPOR-DEPOSITION; FEW-LAYER GRAPHENE; DEVICES; TRANSISTORS; SIO2; CVD;

D O I：

10.1016/j.cap.2014.05.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, we tried to reduce the organic contamination of graphene. This organic contamination most likely occurs during the graphene transfer and lithography steps, which in turn degrades the quality of the graphene. Inorganic Au film was applied for Au-assisted transfer instead of the conventional thin poly(methyl methacrylate), and a new fabrication process using the Au-film for the transfer and masking layer was designed in order to minimize the contamination of graphene from organic residues. As a result, we demonstrated that the overall qualities of the transferred graphene film and graphene transistors have been highly improved. These improvements include an enhancement of mobility, and a decrease of defects, unintentional doping, contact resistance, and sheet resistance. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：1045 / 1050

页数：6

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