Theory of Raman enhancement by two-dimensional materials: Applications for graphene-enhanced Raman spectroscopy

被引:58
作者
Barros, E. B. [1 ,2 ]
Dresselhaus, M. S. [2 ]
机构
[1] Univ Fed Ceara, Dept Fis, BR-60455760 Fortaleza, Ceara, Brazil
[2] MIT, Dept Phys, Cambridge, MA 02139 USA
基金
美国国家科学基金会;
关键词
SCATTERING; INTENSITY; SUBSTRATE; MOLECULES;
D O I
10.1103/PhysRevB.90.035443
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We propose a third-order time-dependent perturbation theory approach to describe the chemical surface-enhanced Raman spectroscopy of molecules interacting with two-dimensional (2D) surfaces such as an ideal 2D metal and graphene, which are both 2D metallic monolayers. A detailed analysis is performed for all the possible scattering processes involving both electrons and holes and considering the different time orderings for the electron-photon and electron-phonon interactions. We show that for ideal 2D metals a surface enhancement of the Raman scattering is possible if the Fermi energy of the surface is near the energy of either the HOMO or the LUMO states of the molecule and that a maximum enhancement is obtained when the Fermi energy matches the energy of either the HOMO or the LUMO energies plus or minus the phonon energy. The graphene-enhanced Raman spectroscopy effect is then explained as a particular case of a 2D surface, on which the density of electronic states is not constant, but increases linearly with the energy measured from the charge neutrality point. In the case of graphene, the Raman enhancement can occur for any value of the Fermi energy between the HOMO and LUMO states of the molecule. The proposed model allows for a formal approach for calculating the Raman intensity of molecules interacting with different 2D materials.
引用
收藏
页数:12
相关论文
共 28 条
  • [1] THEORY OF RAMAN INTENSITIES
    ALBRECHT, AC
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1961, 34 (05) : 1476 - &
  • [2] Calculation of the Raman G peak intensity in monolayer graphene: role of Ward identities
    Basko, D. M.
    [J]. NEW JOURNAL OF PHYSICS, 2009, 11
  • [3] Controlling inelastic light scattering quantum pathways in graphene
    Chen, Chi-Fan
    Park, Cheol-Hwan
    Boudouris, Bryan W.
    Horng, Jason
    Geng, Baisong
    Girit, Caglar
    Zettl, Alex
    Crommie, Michael F.
    Segalman, Rachel A.
    Louie, Steven G.
    Wang, Feng
    [J]. NATURE, 2011, 471 (7340) : 617 - 620
  • [4] UV/Ozone-Oxidized Large-Scale Graphene Platform with Large Chemical Enhancement in Surface-Enhanced Raman Scattering
    Huh, Sung
    Park, Jaesung
    Kim, Young Soo
    Kim, Kwang S.
    Hong, Byung Hee
    Nam, Jwa-Min
    [J]. ACS NANO, 2011, 5 (12) : 9799 - 9806
  • [5] Raman Enhancement on Graphene: Adsorbed and Intercalated Molecular Species
    Jung, Naeyoung
    Crowther, Andrew C.
    Kim, Namdong
    Kim, Philip
    Brus, Louis
    [J]. ACS NANO, 2010, 4 (11) : 7005 - 7013
  • [6] The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene
    Kalbac, Martin
    Reina-Cecco, Alfonso
    Farhat, Hootan
    Kong, Jing
    Kavan, Ladislav
    Dresselhaus, Mildred S.
    [J]. ACS NANO, 2010, 4 (10) : 6055 - 6063
  • [7] Single-Molecule Surface-Enhanced Raman Spectroscopy of Crystal Violet Isotopologues: Theory and Experiment
    Kleinman, Samuel L.
    Ringe, Emilie
    Valley, Nicholas
    Wustholz, Kristin L.
    Phillips, Eric
    Scheidt, Karl A.
    Schatz, George C.
    Van Duyne, Richard P.
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2011, 133 (11) : 4115 - 4122
  • [8] Single molecule detection using surface-enhanced Raman scattering (SERS)
    Kneipp, K
    Wang, Y
    Kneipp, H
    Perelman, LT
    Itzkan, I
    Dasari, R
    Feld, MS
    [J]. PHYSICAL REVIEW LETTERS, 1997, 78 (09) : 1667 - 1670
  • [9] Lim DK, 2010, NAT MATER, V9, P60, DOI [10.1038/NMAT2596, 10.1038/nmat2596]
  • [10] Charge-Transfer Mechanism in Graphene-Enhanced Raman Scattering
    Ling, Xi
    Moura, L. G.
    Pimenta, Marcos A.
    Zhang, Jin
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (47) : 25112 - 25118