Colloidal quantum dot active layers for light emitting diodes

被引：6
作者：
Pagan, Jennifer G. [1 ]
Stokes, Edward B.
Patel, Kinnari
Burkhart, Casey C.
Ahrens, Michael T.
Barletta, Philip T.
O'Steen, Mark
机构：
[1] Dot Metr Technol, Charlotte, NC 28223 USA
[2] Univ N Carolina, Charlotte, NC 28223 USA
[3] Univ N Carolina, Ctr Optoelect & Opt Commun, Charlotte Res Inst, Charlotte, NC 28223 USA
[4] Veeco Compound Semicond Inc, St Paul, MN 55127 USA
来源：
SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 7-8期
关键词：
LED; quantum dot; CdSe; heterostructure;
D O I：
10.1016/j.sse.2006.06.009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper the preliminary results of incorporating a novel active layer into a GaN light emitting diode (LED) are discussed. Integration of colloidal Use quantum dots into a GaN LED active layer is demonstrated. Properties of p-type Mg doped overgrowth GaN are examined via circular transmission line method (CTLM). Effects on surface roughness due to the active layer incorporation are examined using atomic force microscopy (AFM). Electroluminescence of LED test structures is reported, and an ideality factor of n = 1.6 is demonstrated. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1461 / 1465
页数：5
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