Current-driven detection of terahertz radiation using a dual-grating-gate plasmonic detector

被引：40

作者：

Boubanga-Tombet, S. ^{[1
]}

Tanimoto, Y. ^{[1
]}

Satou, A. ^{[1
]}

Suemitsu, T. ^{[1
]}

Wang, Y. ^{[2
]}

Minamide, H. ^{[2
]}

Ito, H. ^{[2
]}

Fateev, D. V. ^{[3
,4
]}

Popov, V. V. ^{[3
,4
]}

Otsuji, T. ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] RIKEN Sendai, Aoba Ku, Sendai, Miyagi 9800845, Japan

[3] Kotelnikov Inst Radio Engn & Elect, Saratov Branch, Saratov 410019, Russia

[4] Saratov NG Chernyshevskii State Univ, Saratov 410012, Russia

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 26期

基金：

俄罗斯基础研究基金会;

关键词：

Current voltage characteristics;

D O I：

10.1063/1.4886763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the detection of terahertz radiation by an on-chip planar asymmetric plasmonic structure in the frequency region above one terahertz. The detector is based on a field-effect transistor that has a dual grating gate structure with an asymmetric unit cell, which provides a geometrical asymmetry within the structure. Biasing the detector with a dc source-to-drain current in the linear region of the current-voltage characteristic introduces an additional asymmetry (electrical asymmetry) that enhances the detector responsivity by more than one order of magnitude (by a factor of 20) as compared with the unbiased case due to the cooperative effect of the geometrical and electrical asymmetries. In addition to the responsivity enhancement, we report a relatively low noise equivalent power and a peculiar non-monotonic dependence of the responsivity on the frequency, which results from the multi-plasmonic-cavity structure of the device. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 21 条

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