Current-driven detection of terahertz radiation using a dual-grating-gate plasmonic detector

被引：40
作者：
Boubanga-Tombet, S. [1 ]
Tanimoto, Y. [1 ]
Satou, A. [1 ]
Suemitsu, T. [1 ]
Wang, Y. [2 ]
Minamide, H. [2 ]
Ito, H. [2 ]
Fateev, D. V. [3 ,4 ]
Popov, V. V. [3 ,4 ]
Otsuji, T. [1 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] RIKEN Sendai, Aoba Ku, Sendai, Miyagi 9800845, Japan
[3] Kotelnikov Inst Radio Engn & Elect, Saratov Branch, Saratov 410019, Russia
[4] Saratov NG Chernyshevskii State Univ, Saratov 410012, Russia
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 26期
基金：
俄罗斯基础研究基金会;
关键词：
Current voltage characteristics;
D O I：
10.1063/1.4886763
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the detection of terahertz radiation by an on-chip planar asymmetric plasmonic structure in the frequency region above one terahertz. The detector is based on a field-effect transistor that has a dual grating gate structure with an asymmetric unit cell, which provides a geometrical asymmetry within the structure. Biasing the detector with a dc source-to-drain current in the linear region of the current-voltage characteristic introduces an additional asymmetry (electrical asymmetry) that enhances the detector responsivity by more than one order of magnitude (by a factor of 20) as compared with the unbiased case due to the cooperative effect of the geometrical and electrical asymmetries. In addition to the responsivity enhancement, we report a relatively low noise equivalent power and a peculiar non-monotonic dependence of the responsivity on the frequency, which results from the multi-plasmonic-cavity structure of the device. (C) 2014 AIP Publishing LLC.
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页数：4
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