Femtosecond luminescence measurements of the intersubband scattering rate in AlxGa1-xAs/GaAs quantum wells under selective excitation

被引：24

作者：

Hartig, M ^{[1
]}

Haacke, S ^{[1
]}

Deveaud, B ^{[1
]}

Rota, L ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT PHYS,CLARENDON LAB,OXFORD OX1 3PU,ENGLAND

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.54.R14269

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the intersubband scattering of electrons in GaAs quantum wells using luminescence up-conversion with 100-fs resolution. The decay time of the n=2 electron-to-heavy-hole transition (e,hh)(2) depends both on the excess energy of the charge carriers and on the excitation density. A Monte Carlo simulation allows us to reproduce the experimental data with high accuracy. The intrinsic LO-phonon scattering rate is found to be 2.0x10(12) s(-1) for 80-meV subband separation. We show the wave-vector dependence and explain the density and excess energy dependence.

引用

页码：14269 / 14272

页数：4

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