Coulomb blockade versus intergrain resistance in colossal magnetoresistive manganite granular films

被引:67
作者
García-Hernández, M [1 ]
Guinea, F [1 ]
de Andrés, A [1 ]
Martínez, JL [1 ]
Prieto, C [1 ]
Vázquez, L [1 ]
机构
[1] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 14期
关键词
D O I
10.1103/PhysRevB.61.9549
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The problem of the low-temperature resistance of granular films of manganites with nanometric grain sizes is addressed. The observed upturn in the low-temperature resistance is understood in terms of charging effects. However, the standard Coulomb blockade scenario does not describe the observed dependence of the charging energies on the applied magnetic field. We propose a theoretical framework in which a distribution of charging energies exists, due mainly to the randomness in the intergranular conductances and not in the grain diameters. The increase of the conductances with the magnetic field induces a renormalization of the charging energies that explain the experimental observations.
引用
收藏
页码:9549 / 9552
页数:4
相关论文
共 22 条
[21]   Temperature and bias dependence of magnetoresistance in doped manganite thin film trilayer junctions [J].
Sun, JZ ;
Abraham, DW ;
Roche, K ;
Parkin, SSP .
APPLIED PHYSICS LETTERS, 1998, 73 (07) :1008-1010
[22]   Effect of Coulomb blockade on magnetoresistance in ferromagnetic tunnel junctions [J].
Takahashi, S ;
Maekawa, S .
PHYSICAL REVIEW LETTERS, 1998, 80 (08) :1758-1761