Crystal quality improvement of solid-phase crystallized evaporated silicon films by in-situ densification anneal

被引：6

作者：

He, Song ^{[1
]}

Hoex, Bram ^{[2
]}

Inns, Daniel ^{[1
]}

Brazil, Ian C. ^{[1
]}

Widenborg, Per I. ^{[1
]}

Aberle, Armin G. ^{[1
]}

机构：

[1] Univ New S Wales, ARC Photovolta Ctr Excellence, Sydney, NSW 2052, Australia

[2] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 6-7期

关键词：

Densification anneal; Poly-Si films; a-Si films; e-beam evaporation;

D O I：

10.1016/j.solmat.2009.01.012

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

An in-situ densification anneal at 550 degrees C was applied to e-beam evaporated a-Si films on Si (100) wafers in a non-UHV environment. The c-Si films were then obtained by annealing the as-deposited a-Si films at 575 degrees C in a tube furnace. It is shown that the crystal quality of the c-Si films obtained from low-rate (50 nm/min) evaporated a-Si film is considerably improved by the densification anneal, whereas densification has no beneficial effect on c-Si films obtained from high-rate (300 nm/min) evaporated a-Si. However, the improvement of c-Si obtained from low-rate evaporated a-Si is not due to a significant difference in the oxygen content in the films. It is suggested that the improvement of the c-Si films is related to structural relaxation induced by the densification anneal of low-rate evaporated a-Si. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1116 / 1119

页数：4

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