A 1.5-V, 1.5-GHz CMOS low noise amplifier

被引:976
作者
Shaeffer, DK
Lee, TH
机构
[1] Center for Integrated Systems, Stanford University, Stanford
[2] University of Southern California, Los Angeles, CA
[3] Stanford University, Stanford, CA
[4] Tektronix, Inc., Beaverton, OR
[5] Massachusetts Inst. of Technology, Cambridge, MA
[6] Analog Devices Semiconductor, Wilmington, MA
[7] Rambus Incorporated, Mountain View, CA
关键词
amplifier noise; induced gate noise; low noise amplifier; microwave amplifier; MOSFET amplifier; noise figure; random noise; semiconductor device noise;
D O I
10.1109/4.568846
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 1.5-GHz low noise amplifier (LNA), intended for use in a global positioning system (GPS) receiver, has been implemented in a standard 0.6-mu m CMOS process, The amplifier provides a forward gain (S21) of 22 dB with a noise figure of only 3.5 dB while drawing 30 mW from a 1.5 V supply, In this paper, we present a detailed analysis of the LNA architecture, including a discussion on the effects of induced gate noise in MOS devices.
引用
收藏
页码:745 / 759
页数:15
相关论文
共 50 条
[41]   A 6 to 21 GHz CMOS Low Noise Amplifier Using Inductive-Peaking and Wideband Matching Techniques [J].
Sun, Yusheng ;
Zhang, Youming ;
Wei, Zhennan ;
Tang, Xusheng ;
Huang, Fengyi .
2024 INTERNATIONAL TECHNICAL CONFERENCE ON CIRCUITS/SYSTEMS, COMPUTERS, AND COMMUNICATIONS, ITC-CSCC 2024, 2024,
[42]   A 2.6-13.7 GHz Highly Linear CMOS Low Noise Amplifier for UWB Applications [J].
Mazhabjafari, Babak ;
Yavari, Mohammad .
2014 22ND IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE), 2014, :296-299
[43]   Analysis and design of a CMOS low noise amplifier for 3-5 GHz UWB systems [J].
Hong Zhang ;
Guican Chen .
2007 5TH INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 2007, :748-+
[44]   High Gain 2.4 GHz CMOS Low Noise Amplifier for Wireless Sensor Network Applications [J].
Murad, S. A. Z. ;
Ismail, R. C. ;
Isa, M. N. M. ;
Ahamd, M. F. ;
Han, W. B. .
2013 IEEE INTERNATIONAL RF AND MICROWAVE CONFERENCE (RFM), 2013, :39-41
[45]   A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications [J].
张浩 ;
李智群 ;
王志功 ;
章丽 ;
李伟 .
半导体学报, 2010, 31 (05) :90-95
[46]   A 11.2 mW 48–62 GHz Low Noise Amplifier in 65 nm CMOS Technology [J].
Xiao Peng Yu ;
Wen Lin Xu ;
Chen Feng ;
Zheng Hao Lu ;
Wei Meng Lim ;
Kiat Seng Yeo .
Circuits, Systems, and Signal Processing, 2016, 35 :1531-1543
[47]   Design of 2.4 GHz Differential Low Noise Amplifier Using 0.18 μm CMOS Technology [J].
Ratan, Smrity ;
Mondal, Debalina ;
Anima, R. ;
Kumar, Chandan ;
Kumar, Amit ;
Kariit, Rajib .
2016 IEEE INTERNATIONAL CONFERENCE ON COMPUTING, COMMUNICATION AND AUTOMATION (ICCCA), 2016, :1435-1439
[48]   Design and implementation of a 1–5 GHz UWB low noise amplifier in 0.18 μm CMOS [J].
Ming Shen ;
Tian Tong ;
Jan H. Mikkelsen ;
Ole K. Jensen ;
Torben Larsen .
Analog Integrated Circuits and Signal Processing, 2011, 67 :41-48
[49]   Design a novel 5.8 GHz wideband low noise amplifier in CMOS technology for WLAN applications [J].
Cheng, Y.-C. ;
Lee, K.-H. ;
Wang, C.-S. .
INTERNATIONAL JOURNAL OF ELECTRONICS, 2007, 94 (6-8) :769-776
[50]   A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications [J].
Zhang Hao ;
Li Zhiqun ;
Wang Zhigong ;
Zhang Li ;
Li Wei .
JOURNAL OF SEMICONDUCTORS, 2010, 31 (05) :0550051-0550056