A 1.5-V, 1.5-GHz CMOS low noise amplifier

被引：976
作者：
Shaeffer, DK
Lee, TH
机构：
[1] Center for Integrated Systems, Stanford University, Stanford
[2] University of Southern California, Los Angeles, CA
[3] Stanford University, Stanford, CA
[4] Tektronix, Inc., Beaverton, OR
[5] Massachusetts Inst. of Technology, Cambridge, MA
[6] Analog Devices Semiconductor, Wilmington, MA
[7] Rambus Incorporated, Mountain View, CA
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1997年 / 32卷 / 05期
关键词：
amplifier noise; induced gate noise; low noise amplifier; microwave amplifier; MOSFET amplifier; noise figure; random noise; semiconductor device noise;
D O I：
10.1109/4.568846
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 1.5-GHz low noise amplifier (LNA), intended for use in a global positioning system (GPS) receiver, has been implemented in a standard 0.6-mu m CMOS process, The amplifier provides a forward gain (S21) of 22 dB with a noise figure of only 3.5 dB while drawing 30 mW from a 1.5 V supply, In this paper, we present a detailed analysis of the LNA architecture, including a discussion on the effects of induced gate noise in MOS devices.
引用
收藏
页码：745 / 759
页数：15
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