A 1.5-V, 1.5-GHz CMOS low noise amplifier

被引：976

作者：

Shaeffer, DK

Lee, TH

机构：

[1] Center for Integrated Systems, Stanford University, Stanford

[2] University of Southern California, Los Angeles, CA

[3] Stanford University, Stanford, CA

[4] Tektronix, Inc., Beaverton, OR

[5] Massachusetts Inst. of Technology, Cambridge, MA

[6] Analog Devices Semiconductor, Wilmington, MA

[7] Rambus Incorporated, Mountain View, CA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1997年 / 32卷 / 05期

关键词：

amplifier noise; induced gate noise; low noise amplifier; microwave amplifier; MOSFET amplifier; noise figure; random noise; semiconductor device noise;

D O I：

10.1109/4.568846

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1.5-GHz low noise amplifier (LNA), intended for use in a global positioning system (GPS) receiver, has been implemented in a standard 0.6-mu m CMOS process, The amplifier provides a forward gain (S21) of 22 dB with a noise figure of only 3.5 dB while drawing 30 mW from a 1.5 V supply, In this paper, we present a detailed analysis of the LNA architecture, including a discussion on the effects of induced gate noise in MOS devices.

引用

页码：745 / 759

页数：15

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