Charge and Thermoelectric Transport in Polymer-Sorted Semiconducting Single-Walled Carbon Nanotube Networks

被引:42
作者
Statz, Martin [1 ]
Schneider, Severin [2 ]
Berger, Felix J. [2 ]
Lai, Lianglun [1 ,3 ]
Wood, William A. [1 ]
Abdi-Jalebi, Mojtaba [1 ,4 ]
Leingang, Simone [5 ]
Himmel, Hans-Joerg [5 ]
Zaumseil, Jana [2 ,6 ]
Sirringhaus, Henning [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] Heidelberg Univ, Inst Phys Chem, D-69120 Heidelberg, Germany
[3] Univ Cambridge, Cambridge Graphene Ctr, Cambridge CB3 0FA, England
[4] UCL, Inst Mat Discovery, London WC1E 7JE, England
[5] Heidelberg Univ, Inst Inorgan Chem, D-69120 Heidelberg, Germany
[6] Heidelberg Univ, Ctr Adv Mat, D-69120 Heidelberg, Germany
基金
英国工程与自然科学研究理事会; 欧洲研究理事会;
关键词
single-walled carbon nanotubes networks; charge transport; thermoelectric transport; Seebeck coefficient; Boltzmann transport formalism;
D O I
10.1021/acsnano.0c06181
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Understanding the charge transport mechanisms in chirality-selected single-walled carbon nanotube (SWCNT) networks and the influence of network parameters is essential for further advances of their optoelectronic and thermoelectric applications. Here, we report on charge density and temperature-dependent field-effect mobility and on-chip field-effect-modulated Seebeck coefficient measurements of polymer-sorted monochiral small-diameter (6,5) (0.76 nm) and mixed large-diameter SWCNT (1.17-1.55 nm) networks (plasma torch nanotubes, RN) with different network densities and length distributions. All untreated networks display balanced ambipolar transport and electron-hole symmetric Seebeck coefficients. We show that charge and thermoelectric transport in SWCNT networks can be modeled by the Boltzmann transport formalism, incorporating transport in heterogeneous media and fluctuation-induced tunneling. Considering the diameter-dependent one-dimensional density of states (DoS) of the SWCNTs composing the network, we can simulate the charge density and temperature-dependent Seebeck coefficients. Our simulations suggest that scattering in these networks cannot be described as simple one-dimensional acoustic and optical phonon scattering as for single SWCNTs. Instead the relaxation time is inversely proportional to energy (tau proportional to (E - E-C)(s), s = -1, E-C being the energy of the first van Hove singularity), presumably pointing toward the more two-dimensional character of scattering events and the necessity to include scattering at the SWCNT junctions. Finally, our observation of higher power factors in trap-free, 1,2,4,5-tetrakis(tetramethylguanidino)benzene-treated (6,5) networks than in the RN networks emphasizes the importance of chirality selection to tune the width of the DoS. To benefit from both higher intrinsic mobilities and a large thermally accessible DoS, we propose trap-free, narrow DoS distribution, large-diameter SWCNT networks for both electronic and thermoelectric applications.
引用
收藏
页码:15552 / 15565
页数:14
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