Mode-locking in vertical external-cavity surface-emitting lasers with type-II quantum-well configurations

被引：2

作者：

Kilen, I ^{[1
]}

Koch, S. W. ^{[1
,2
,3
]}

Hader, J. ^{[1
,4
]}

Moloney, J., V ^{[1
,4
,5
]}

机构：

[1] Univ Arizona, Coll Opt Sci, 1630 East Univ Blvd, Tucson, AZ 85721 USA

[2] Philipps Univ Marburg, Dept Phys, Renthof 5, D-35032 Marburg, Germany

[3] Philipps Univ Marburg, Mat Sci Ctr, Renthof 5, D-35032 Marburg, Germany

[4] Nonlinear Control Strategies Inc, Tucson, AZ 85704 USA

[5] Univ Arizona, Dept Math, 617 N Santa Rita Ave, Tucson, AZ 85721 USA

来源：

APPLIED PHYSICS LETTERS | 2019年 / 114卷 / 25期

关键词：

SEMICONDUCTOR; POWER;

D O I：

10.1063/1.5098903

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A microscopic study of mode-locked pulse generation is presented for vertical external-cavity surface-emitting lasers utilizing type-II quantum well configurations. The coupled Maxwell semiconductor Bloch equations are solved numerically where the type-II carrier replenishment is modeled via suitably chosen reservoirs. Conditions for stable mode-locked pulses are identified allowing for pulses in the 100 fs range. Design strategies for type-II configurations are proposed that avoid potentially unstable pulse dynamics.

引用

页数：5

共 25 条

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