2-Dimensional Transition Metal Dichalcogenides with Tunable Direct Band Gaps: MoS2(1-x)Se2x Monolayers

被引：350

作者：

Mann, John ^{[1
]}

Ma, Quan ^{[1
]}

Odenthal, Patrick M. ^{[1
]}

Isarraraz, Miguel ^{[1
]}

Le, Duy ^{[2
]}

Preciado, Edwin ^{[1
]}

Barroso, David ^{[1
]}

Yamaguchi, Koichi ^{[1
]}

Palacio, Gretel von Son ^{[1
]}

Andrew Nguyen ^{[1
]}

Tai Tran ^{[1
]}

Wurch, Michelle ^{[1
]}

Ariana Nguyen ^{[1
]}

Klee, Velveth ^{[1
]}

Bobek, Sarah ^{[1
]}

Sun, Dezheng ^{[1
,3
,4
]}

Heinz, Tony F. ^{[3
,4
]}

Rahman, Talat S. ^{[2
]}

Kawakami, Roland ^{[1
]}

Bartels, Ludwig ^{[1
]}

机构：

[1] Univ Calif Riverside, Riverside, CA 92521 USA

[2] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[3] Columbia Univ, Dept Phys, New York, NY USA

[4] Columbia Univ, Dept Elect Engn, New York, NY USA

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 09期

基金：

美国国家科学基金会;

关键词：

molybdenum disulfide; molybdenum diselenide; transition metal dichalcogenides; CVD; alloys; bandgap engineering; atomically thin films; MOS2 ATOMIC LAYERS; LARGE-AREA; VALLEY POLARIZATION; GROWTH; PHOTOLUMINESCENCE; GRAPHENE; FILMS;

D O I：

10.1002/adma.201304389

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

MoS2(1-x) Se2x single-layer films are prepared using a mixture of organic selenium and sulfur precursors as well as a solid molybdenum source. The direct bandgaps are found to scale nearly linearly with composition in the range of 1.87 eV (pure single-layer MoS2) to 1.55 eV (pure single-layer MoSe2) permitting straightforward bandgap engineering. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1399 / 1404

页数：6

共 45 条

[1] RAMAN-SPECTRA OF C-SI1-XGEX ALLOYS [J].