Plasma hydrogenated, reactively sputtered aluminium oxide for silicon surface passivation

被引：11

作者：

Zhang, Xinyu ^{[1
]}

Cuevas, Andres ^{[1
]}

机构：

[1] Australian Natl Univ, Sch Engn, Canberra, ACT 0200, Australia

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2013年 / 7卷 / 09期

关键词：

solar cells; surface passivation; sputtering; hydrogenation; silicon; aluminium oxide; CRYSTALLINE SILICON; DEPOSITION; DIOXIDE; VOLTAGE; FILMS;

D O I：

10.1002/pssr.201308027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The intentional addition of hydrogen during reactive sputtering of AlOx films has led to a dramatic improvement of the surface passivation of crystalline silicon wafers achieved with this technique. The 5 ms effective minority carrier lifetime measured on 1.5 cm n-type CZ silicon wafers is close to the 6 ms of a control wafer coated by atomic layer deposition (ALD) of AlOx. Hydrogen-sputtered films also provide excellent passivation of 1 cm p-type silicon, as demonstrated by an effective lifetime of 1.1 ms. It is likely that the improved passivation is related to the formation of an interfacial silicon oxide layer, as indicated by FTIR measurements. (c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：619 / 622

页数：4

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