Defect-free InP nanowires grown in [001] direction on InP(001)

被引：164
|
作者：
Krishnamachari, U
Borgstrom, M
Ohlsson, BJ
Panev, N
Samuelson, L
Seifert, W
Larsson, MW
Wallenberg, LR
机构：
[1] Lund Univ, Dept Chem Mat, S-22100 Lund, Sweden
[2] QuMat Technol AB, Lund, Sweden
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 11期
关键词：
D O I：
10.1063/1.1784548
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas <111>B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.
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页码：2077 / 2079
页数：3
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