Luminescence efficiency improvement of small-size micro light-emitting diodes by a digital etching technology

被引:7
作者
Jin, Yi-Kai [1 ]
Chiang, Hung-Yi [1 ]
Lin, Kuan-Heng [2 ]
Lee, Chia-An [2 ]
Huang, Jian-Jang [1 ,3 ]
机构
[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, 1 Roosevelt Rd,Sec 4, Taipei 106, Taiwan
[2] AU Optron Corp, 1 Li Hsin Rd 2 Hsinchu Sci Pk, Hsinchu 30078, Taiwan
[3] Natl Taiwan Univ, Dept Elect Engn, 1 Roosevelt Rd,Sec 4, Taipei 106, Taiwan
关键词
GAN; LEDS;
D O I
10.1364/OL.476967
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The decrease of light output efficiency with the reduction of LED (light-emitting diode) die size is one of the challenges of micro-LED displays. Here we propose a digital etching technology that employs multi-step etching and treatment to mitigate sidewall defects exposed after mesa dry etching. In this study, by two-step etching and N2 treatment, the electrical properties of the diodes show an increase of forward current and a decrease in reverse leakage due to suppressed sidewall defects. An increase of light output power by 92.6% is observed for 10x10-mu m(2) mesa size with digital etching, as compared with that with only one step etching and no treatment. We also demonstrated only 1.1% decrease in output power density for a 10x10-mu m(2) LED as compared with a 100x100-mu m(2) device without performing digital etching. (c) 2022 Optica Publishing Group
引用
收藏
页码:6277 / 6280
页数:4
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