Interaction of carbon partitioning, carbide precipitation and bainite formation during the Q&P process in a low C steel

被引:184
作者
HajyAkbary, Farideh [1 ,2 ]
Sietsma, Jilt [2 ]
Miyamoto, Goro [3 ]
Furuhara, Tadashi [3 ]
Santofimia, Maria Jesus [2 ]
机构
[1] Mat Innovat Inst, Delft, Netherlands
[2] Delft Univ Technol, Delft, Netherlands
[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 980, Japan
关键词
Quenching and partitioning; Carbides; Bainite; Microstructural modelling; MARTENSITE-TRANSFORMATION; HEAT-TREATMENT; AUSTENITE; MICROSTRUCTURES; SILICON; QUENCH; MODEL;
D O I
10.1016/j.actamat.2015.11.032
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Theoretical understanding of the "quenching and partitioning" (Q&P) process allowed developing microstructures consisting of carbon-depleted martensite and retained austenite that deliver superior mechanical properties. Most of the models describing the Q&P process are limited to systems in which carbide precipitation in martensite and decomposition of austenite to bainite are totally suppressed. However, these reactions are often unavoidable, even in low-carbon steels containing a relatively high concentration of Si and Mn. This work investigates interactions between carbon partitioning, carbide precipitation and carbide-free bainite formation during the Q&P process of a 0.3C-1.6Si-3.5Mn (wt.%) steel with non-homogenous distribution of the alloying elements. It was found that prior to the partitioning step epsilon-carbide forms in martensite. The decomposition of this carbide is required for a full completion of the carbon partitioning from martensite to austenite. Slow kinetics of decomposition of epsilon-carbide retards the carbon partitioning process. Results show that a fraction of austenite becomes stable by carbon partitioning and does not decompose to bainite. In the specimens quenched to lower temperature, a higher fraction of austenite becomes stable and consequently a lower fraction of bainite is formed. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:72 / 83
页数:12
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