Transformation of an unordered structural network in amorphous hydrogenated silicon films as a result of doping with boron

被引：2

作者：

Mezdrogina, MM ^{[1
]}

Patsekin, AV ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2000年 / 34卷 / 03期

关键词：

D O I：

10.1134/1.1187984

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of the technological parameters of deposition, the purity and relative concentration of diborane, and the substrate temperature on electrical parameters of (a-Si:H):B films obtained by high-frequency decomposition of a gaseous mixture in a multielectrode system was studied. Simultaneous existence of the mechanisms for doping and modification in the case of introduction of boron from diborane in the course of deposition of (a-Si:H):B films is proposed. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：348 / 352

页数：5

共 15 条

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