A 5 mm x 5 mm mid-wavelength infrared HgCdTe photodiode array with negative luminescence efficiency ≡95%

被引:4
作者
Lindle, JR
Bewley, WW
Vurgaftman, I
Meyer, JR
Johnson, JL
Thomas, ML
Piquette, EC
Tennant, WE
机构
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Rockwell Sci, Imaging Div, Thousand Oaks, CA 91360 USA
关键词
HgCdTe; negative luminescence (NL); cold shielding;
D O I
10.1007/s11664-004-0053-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The negative luminescence (NL) efficiency of a 5 mm X 5 mm array (100% effective fill factor) of HgCdTe photodiodes (lambda(co) = 4.8 mum at 295 K) has been measured as a function of temperature. The internal NL efficiency of approximate to95% at lambda = 4 mum is nearly independent of temperature in the 240-300 K range and, at 300 K, corresponds to an apparent temperature reduction of 60 K. This performance is obtained at a reverse-bias saturation-current density of only 0.11 A/cm(2) at 296 K. With large area, high efficiency, and low saturation-current density, our results demonstrate a level of NL device performance at which such applications as cold shields for large-format focal plane arrays (FPAs) and multipoint nonuniformity correctors appear practical.
引用
收藏
页码:600 / 603
页数:4
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