Study on fence-free platinum etching using chlorine-based gases in inductively coupled plasma

被引：18
|
作者：
Chung, CW
Song, HG
机构：
[1] Samsung Adv. Institute of Technology, Electronic Materials Laboratory, Materials Sector
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 11期
关键词：
D O I：
10.1149/1.1838073
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Platinum thin films have been successfully etched without redeposition of etch products using chlorine-based gases in an inductively coupled plasma. The redeposited materials formed on the pattern sidewall by using Cl-2/Ar gas combination were analyzed by x-ray photoelectron spectroscopy and secondary ion mass spectrometry. We found that the redeposited material was mainly PtCl2 compound. Based on this result, SiCl4/Cl-2/Ar gas chemistry has been proposed as a new etching gas and demonstrated good etching profile of Pt films without unwanted redeposition.
引用
收藏
页码：L294 / L296
页数：3
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