Emission of Si nanoclusters of different phases in amorphous hydrogenated silicon

被引：9

作者：

Torchynska, T. V. ^{[1
]}

机构：

[1] ESFM Natl Polytech Inst, Mexico City 07738, DF, Mexico

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2009年 / 45卷 / 4-5期

关键词：

Silicon nanocrystals; Amorphous silicon nanoclusters; XRD; Photoluminescence; HW-CVD; POROUS SILICON; PHOTOLUMINESCENCE; LUMINESCENCE; NANOCRYSTALLITES; FILMS;

D O I：

10.1016/j.spmi.2008.10.005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper presents the results of PL spectrum studies for Si nanoclusters in an amorphous silicon matrix. The four amorphous Si layers were prepared by the hot-wire CVD method on glass substrates at a temperature of 250 degrees C and different filament temperatures in the range of 1650-1950 degrees C. The joint analysis of PL and X ray diffraction results dependant on technological conditions has been done. PL bands deal with Si nanocrystals and amorphous Si nanoclusters are discussed as well. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：267 / 270

页数：4

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