Thick silicon carbide homoepitaxial layers grown by CVD techniques

被引：70

作者：

Henry, Anne ^{[1
]}

ul Hassan, Jawad

Bergman, Jonas Peder

Hallin, Christer

Janzen, Erik

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

[2] Norstel AB, S-58015 Linkoping, Sweden

来源：

CHEMICAL VAPOR DEPOSITION | 2006年 / 12卷 / 8-9期

关键词：

homoepitaxy; hot-wall reactors; morphology; SiC; thick epilayers;

D O I：

10.1002/cvde.200606470

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is described for two types (horizontal and vertical) of hot-wall (HW) CVD reactors. In both cases, the advantages of HWCVD are the better cracking efficiency of the precursor gases and better temperature distribution together with low input power. Characterizations of some examples of thick SiC layers grown are given.

引用

页码：475 / 482

页数：8

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