Manipulation of ZnO nanowire by low-temperature solution approach

被引:0
作者
Lin, Chia-Hsin [1 ]
Cheng, Syh-Yuh [1 ]
Lin, Ren-Jay [1 ]
Wang, Yi-Hui [1 ]
机构
[1] Ind Technol Res Inst, Mat Res Labs, Hsinchu 310, Taiwan
来源
PROGRESS IN SEMICONDUCTOR MATERIALS V-NOVEL MATERIALS AND ELECTRONIC AND OPTOELECTRONIC APPLICATIONS | 2006年 / 891卷
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A catalyst free, structure-induced heterogeneous nucleation and direct growth of ZnO nanowires on organic and inorganic substrates was prepared by low-temperature solution approach process. The experimental results showed that ZnO nanowires could be directly synthesized upon the concave of substrate without any pre-seeding. In this work ZnO nanowires were grown on both polystyrene bead layer and physical-grinded wafer substrate. ZnO nanowires with a broad aspect ratio of 10(-2) similar to 10(2) was controlled mainly by adjusting of reactant concentration and pH state of solution. A needle-like ZnO nanotip were also prepared by a two-step limited growth condition as a result that tip diameter is several nanometers only, which may be highly in favor of the field emission. Structure-induced heterogeneous nucleation and growth facilitates the fabrication of ZnO nanowires as the potential photocletronic units in field-emission displays.
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页码:479 / +
页数:3
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