Switched Bias Differential MOSFET Dosimeter

被引：18

作者：

Garcia-Inza, M. ^{[1
]}

Carbonetto, S. ^{[1
]}

Lipovetzky, J. ^{[1
,2
]}

Carra, M. J. ^{[1
]}

Sambuco Salomone, L. ^{[1
]}

Redin, E. G. ^{[1
]}

Faigon, A. ^{[1
,2
]}

机构：

[1] Univ Buenos Aires, Device Phys Microelect Lab, INTECIN, Fac Ingn, Buenos Aires, DF, Argentina

[2] Consejo Nacl Invest Cient & Tecn, RA-1033 Buenos Aires, DF, Argentina

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 03期

关键词：

MOS sensors; MOSFET dosimeter; radiation effects; solid-state detectors; CHARGE NEUTRALIZATION; RADIATION; OXIDES; TRAPS;

D O I：

10.1109/TNS.2014.2316337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a differential MOSFET sensor reading technique based on the bias controlled cycled measurement. The circuit was implemented, and tested with gamma radiation from a 60-cobalt source. Temperature rejection performance was assessed during the exposure in real-time measurements. The results show that in comparison with a single MOSFET dosimeter the thermal drift is 20 times smaller and the radiation sensitivity is approximately 10% higher. The switched biasing allows to extend the measurement range beyond MOSFET's threshold voltage saturation.

引用

页码：1407 / 1413

页数：7

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