Numerical simulation of semiconductor optical amplifier assisted Sagnac gate and investigation of its switching characteristics

被引:31
作者
Houbavlis, T
Zoiros, KE
机构
[1] Natl Tech Univ Athens, Dept Elect & Comp Engn, GR-15773 Athens, Greece
[2] Democritus Univ Thrace, Dept Elect & Comp Engn, Sect Telecommun & Space Sci, Lab Telecommun Syst, GR-67100 Xanthi, Greece
关键词
semiconductor optical amplifier; Sagnac gate; switching; numerical simulation;
D O I
10.1117/1.1751132
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The switching characteristics of a semiconductor optical amplifier (SOA)-assisted Sagnac gate are analyzed in terms of their critical performance parameters for full duty cycle operation from 10 to 40 GHz. Within this frame, the influence of the control pulse width, as well as of the SOA gain recovery time on the switching energy and the contrast ratio, is examined through numerical simulation. The obtained results show that full switching operation at 40 GHz or higher is feasible either by deploying gain recovery reduction techniques in bulk SOAs, or other alternative technologically advanced optical devices, such as quantum-dot SOAs. (C) 2004 Society of Photo-Optical Instrumentation Engineers.
引用
收藏
页码:1622 / 1627
页数:6
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